品牌
生产厂家厂商性质
泰州市所在地
晶体尺寸:10毫米
电学性能:半导体,拓扑绝缘体,热电材料
晶体结构:单斜晶结构
晶胞参数:a = 1.430nm,B = 0.403nm,C = 0.986nm,α=γ= 90°,β= 95.40
晶体类型:合成
晶体纯度:>99.995%
表征方法:XRD、拉曼、EDX
Powder X-ray diffraction (XRD) of a single crystal As2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal As2Te3 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal As2Te3. Measurement was performed with a 785 nm Raman system at room temperature.